Apparatus for producing monocrystalline silicon

Details Apparatus for producing monocrystalline silicon Apparatus for producing monocrystalline silicon

1982-04-22

1985-02-05

Bernstein, Hiram H.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156607, C30B 1500

Patent

active

044977778

ABSTRACT:
An apparatus for producing monocrystalline silicon uniformly containing oxygen at a high concentration. The invention provides an apparatus that employs an improvement in the Czochralski method for producing monocrystalline silicon. The apparatus includes an annular shaped member which floats on the surface of the silicon melt and prevents the escape of oxygen from the silicon melt. The member rotates around a pull of monocrystalline silicon which is pulled through the aperture of the member. The member preferably is made of quartz which supplies oxygen to the silicon melt and thereby increases the concentration of oxygen in the melt.

REFERENCES:
patent: 3002824 (1961-10-01), Francois
patent: 4167554 (1979-09-01), Fisher
Hawley, Condensed Chemical Dictionary, 8th Ed., p. 783, 1971, Van Nostrand Reinhold, N.Y.
T. Y. Tan et al., Applied Physics Letters, vol. 30, No. 4, pp. 175-176, (2/15/1977), "Intrinsic Gettering by Oxice Precipitate Induced Dislocations in Czochralski Si.".
L. D. Katz, et al., Journal Electrochemical Society, vol. 125, No. 7, pp. 1151-1155, (Jul., 1978), "High Oxygen Czochralski Silicon Crystal Growth Relationship to Epitaxial Stacking Faults."

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