Metal treatment – Compositions – Heat treating
Patent
1983-01-03
1985-02-05
Saba, W. G.
Metal treatment
Compositions
Heat treating
29576E, 29576W, 29576T, 29577C, 29578, 29580, 148174, 148175, 156647, 156649, H01L 2176, H01L 21308
Patent
active
044976658
ABSTRACT:
In a method of fabricating a semiconductor device having a V-groove insulating isolation structure with polycrystalline silicon filled in the groove of which the internal surface is covered with an insulating film of silicon dioxide, the method according to this invention comprises the steps of selectively ion implanting an impurity material into a desired region of the polycrystalline silicon layer in order to give to this region a desired different type of electric conductivity relative to the polycrystalline silicon layer followed by a selective annealing by an energy beam such as a laser of a desired part of the polycrystalline silicon layer including the region into which the impurity material has been ion implanted.
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patent: 4037306 (1977-07-01), Gutteridge et al.
patent: 4048649 (1977-09-01), Bohn
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patent: 4260436 (1981-04-01), Taylor
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4295924 (1981-10-01), Garnache et al.
patent: 4420874 (1983-12-01), Funatsu
Applied Physics Letters, vol. 34, No. 11, Jun. 1979, pp. 737-739, New York, USA, C. P. Wu et al.
Fujitsu Limited
Saba W. G.
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