Semiconductor pressure sensor and method of manufacturing the sa

Metal working – Method of mechanical manufacture – Electrical device making

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29454, 73721, 73727, 73DIG4, 338 4, G01L 708, G01L 906, H01C 1700

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active

047666668

ABSTRACT:
A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film. All the processing steps of the sensor are conducted solely on the main surface of the semiconductor substrate, namely, on a single side. Therefore, it is possible to manufacture the sensor itself utilizing the substantially same technique as the known integrated circuit manufacturing technique and to form the diaphragm with a predetermined thickness such that it may process a thin and precisely dimensioned thickness.

REFERENCES:
patent: 3858150 (1974-12-01), Gurtler et al.
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4188258 (1980-02-01), Mounteer et al.
patent: 4432007 (1984-02-01), Cady
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4670092 (1987-06-01), Motamedi

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