Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-12-28
1986-06-24
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 148 15, 148DIG18, H01L 21425, H01L 21385
Patent
active
045960682
ABSTRACT:
The surface of the channel and top gates of N channel IGFETS and JFETS respectively are compensated after a high temperature processing by ion implanting boron through a protective layer. The peak impurity concentration is to occur in a sacrificial gate pad oxide layer to ensure a predictable dopant concentration in the substrate.
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Crowder et al, "Compensating for the Depletion of Boron Produced in NPN Bipolar Transistors," IBM Technical Disclosure Bull., vol. 15, No. 3, Aug. '72.
Auyang Hunter L.
Harris Corporation
Hearn Brian E.
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