Semiconductor device having an insulated gate field effect thin

Details Semiconductor device having an insulated gate field effect thin Semiconductor device having an insulated gate field effect thin

1996-09-06

1998-02-10

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 66, 257 72, 257435, 349 43, 349 44, H01L 2904

Patent

active

057172242

ABSTRACT:
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

REFERENCES:
patent: 5327001 (1994-07-01), Wakai
patent: 5365079 (1994-11-01), Kodaira et al.
patent: 5434433 (1995-07-01), Takasu et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
H. Ono Kikuo et al.: "Flat Panel Display", 91, p. 109.

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