Enhancement/depletion mode field effect transistor driver

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307205, 307246, 307251, 307DIG4, H03K 1704, H03K 1760, H03K 1712, H03K 3353

Patent

active

040717836

ABSTRACT:
Disclosed is a field effect transistor (FET) driver circuit capable of full supply voltage signal swings and high switching speeds while dissipating relatively little power. The output is obtained from a node between two series connected enhancement mode devices. The first of these series connected enhancement mode devices receives an input signal at its gating electrode, while the second of this pair of series connected devices has its gating electrode capacitively coupled to the output node through a first gatable depletion mode device. The first depletion mode device is in a series electrical path with a second depletion mode device and an enhancement mode device. The second depletion mode device and the enhancement mode device in series therewith receive the same phase of the input signal as the gate of said one series connected output transistor while the first gated depletion mode device is either self-biased or gets a gating input that is out of phase therewith. A depletion mode device in parallel with one of the series connected enhancement mode output devices maintains the output node at a full supply voltage level.

REFERENCES:
patent: 3855581 (1974-12-01), Greene
patent: 3912948 (1975-10-01), Bapat
patent: 3988617 (1976-10-01), Price
Harroun, "Bootstrap Inverter Driver", IBM Tech. Discl. Bull.; vol. 19, No. 3, pp. 827-828; 8/1976.
Daniels, et al., "Field-Effect Transistor Push-Pull Driver", IBM Tech. Discl. Bull.; vol. 17, No. 10, pp. 2961-2962; 3/1975.
Chu, et al., "Bootstrap Push-Pull Driver", IBM Tech. Discl. Bull.; vol. 18, No. 3, pp. 710-711; 8/1975.
Sonoda, "MOSFET Powering circuit", IBM Tech. Discl. Bull.; vol. 13, No. 9, pp. 2658; 2/1971.

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