Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-09-12
1985-02-05
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29579, 29590, 148187, 148188, 156633, 156657, H01L 2182, H01L 21225, H01L 2120
Patent
active
044971079
ABSTRACT:
A gate-source structure and fabrication method for a surface-gate static induction transistor. The method requires only one masking step during fabrication, thereby eliminating or minimizing mask registration problems during fabrication of the devices. The method and the device are characterized by a two-step etching process which forms T-shaped gate windows in layers of poly-crystalline silicon with different doping levels. The source region is formed during an annealing step from the layer with high doping level. During the annealing step, the gate regions are also formed from gate impurities implanted previously in the gate windows. The source structure and the gate structure are separated by a silicon dioxide protective layer.
REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4351099 (1982-09-01), Takagi et al.
patent: 4352238 (1982-10-01), Shimbo
"Mitsubishi JFET Device Operates at Ultrahigh Frequency", Electronics, vol. 49, No. 15, Jul. 76, pp. 3E-4E.
Auyang Hunter L.
GTE Laboratories Incorporated
Hearn Brian E.
Yeo J. Stephen
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