Method of manufacturing multilayer interconnection structure hav

Fishing – trapping – and vermin destroying

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437228, 437231, H01L 21469

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active

057168725

ABSTRACT:
A wiring pattern is formed on an insulating film provided on one major surface of a semiconductor substrate. Then, a first dielectric film covering the wiring pattern is formed. A second dielectric film is formed on the first dielectric film by coating and baking. Then, the second dielectric film is etched until at least a part of the first dielectric film on steps of the wiring pattern is exposed. The steps between the first dielectric film and the second dielectric film are smoothed by the irradiation of the entire surface with low energy ions. Then, a third dielectric film is formed covering the first and second dielectric films.

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