Insulated-gate field-effect transistor structure and method

Details Insulated-gate field-effect transistor structure and method Insulated-gate field-effect transistor structure and method

1995-06-07

1998-02-10

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 21265

Patent

active

057168610

ABSTRACT:
An insulated-gate field-effect transistor 10 is formed on a semiconductor substrate 8. The source 12 and/or drain 20 junction region comprises a heavily doped region 14 (22), a non-overlapped lightly doped region 16 (24), and an overlapped lightly doped region 18 (26). The doping concentration and junction depth of the overlapped 18 and non-overlapped 16 lightly doped regions may be controlled and optimized independently. An insulating layer 50 is formed over a channel region 28 which separates the source 12 and drain 20, and also over the overlapped portions of the source 18 and drain 26. A gate 42 is formed over the insulating layer 50. Two exemplary methods of fabrication are disclosed in detail herein as well as other systems and methods.

REFERENCES:
patent: 4182023 (1980-01-01), Cohen et al.
patent: 4442449 (1984-04-01), Lehrer et al.
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 4771014 (1988-09-01), Liou et al.
patent: 4837181 (1989-06-01), Galbiati
patent: 4928163 (1990-05-01), Yoshida et al.
patent: 4935379 (1990-06-01), Toyoshima
patent: 4943836 (1990-07-01), Mori
patent: 4949136 (1990-08-01), Jain
patent: 5015598 (1991-05-01), Verhaar
patent: 5047816 (1991-09-01), Cuevas
patent: 5462884 (1995-10-01), Taniguchi
patent: 5476802 (1995-12-01), Yamazaki et al.
patent: 5543340 (1996-08-01), Lee
patent: 5559049 (1996-09-01), Cho

Affiliated with

Also associated with

Rating

Insulated-gate field-effect transistor structure and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated-gate field-effect transistor structure and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated-gate field-effect transistor structure and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2076679