Semiconductor laser with wide side of tapered light gain region

Details Semiconductor laser with wide side of tapered light gain region Semiconductor laser with wide side of tapered light gain region

1996-01-17

2000-06-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 50, 372704, H01S 3085

Patent

active

060758015

ABSTRACT:
The semiconductor laser disclosed includes a first conductivity type buffer layer, an active layer and a second conductivity type cladding layer which are sequentially positioned on a first conductivity type semiconductor substrate. The active layer has a laser gain region to which an electric current is injected. The laser gain region having a width varying linearly along a resonating direction is disposed between a high reflection film provided on a facet of a wide side of the laser gain region of the active layer and a low reflection film provided on a facet of a narrow side of the laser gain region of the active layer. The facet of the narrow side is for outputting oscillation beams of a high order mode. This provides a high electrical-to-optical conversion efficiency, and enables the outputting of a large output from a narrow light emission region.

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