Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1992-12-01
1994-12-06
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, C30B 1522
Patent
active
053700783
ABSTRACT:
Growth of monocrystalline rods from a bulk melt is carried out by a modified Czochralski process using a float which floats on the bulk melt held in a crucible. Melt flows through a passageway in the float to a crystal growth zone at a rate which prevents diffusion of dopant from the growth zone to the bulk melt. The shape of the crystal may be determined by a shaper wall in the float which defines the growth zone, in which case the crystal body is pulled from the float as it grows without rotating the crystal. The temperature of the float near the shaper wall may be monitored and controlled to control the crystallization process.
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Kou Sindo
Lin Ming-Hsien
Breneman R. Bruce
Garrett Felisa
Wisconsin Alumni Research Foundation
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