Method of estimating lifetime of floating SOI-MOSFET

Details Method of estimating lifetime of floating SOI-MOSFET Method of estimating lifetime of floating SOI-MOSFET

1999-09-28

2000-11-14

Hoff, Marc S.

Data processing: measuring, calibrating, or testing

Measurement system

Performance or efficiency evaluation

702183, 702 81, 702 57, 702 58, 324769, G01R 3126, H01L 2166, H01L 21336, H01L 2978, H01L 29786

Patent

active

061482730

ABSTRACT:
In a method of estimating the lifetime of a floating SOI-MOSFET, constants A and B, stress condition dependency Id.sup.t (S) of a drain current and stress condition dependency Isub(S) of a substrate current in a body-fixed SOI-MOSFET, and stress condition dependency Id.sup.f (S) of a drain current in the floating SOI-MOSFET are obtained from experiment to estimate lifetime .tau..sup.f (S) from the following equation: ##EQU1## where W.sup.f represents a known channel width of the floating SOI-MOSFET.

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