Electronic timepiece semiconductor intergrated circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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58 23AC, 307220C, 357 42, G04C 300, H03K 2100

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active

039396428

ABSTRACT:
A semiconductor integrated circuit especially suitable for use in electronic timepieces to improve the operation thereof is provided. An integrated circuit chip including complementary coupled P-channel and N-channel MOS field effect transistors having insulation placed therebetween by forming same spaced on an insulating substrate. The insulation effects reduced current consumption to thereby enhance the life of the battery in an electronic timepiece.

REFERENCES:
patent: 3585527 (1971-06-01), Luscher
patent: 3715604 (1973-02-01), Rapshy
patent: 3757510 (1973-09-01), Dill
J. D. Wilcock, Most Digital Logic Circuits in Silicon Films Deposited, Sapphire Substrates, Solid-State Electronics, 1971, Vol. 14, pp. 315-325.
H. W. Kaiser et al., Recent Developments in CMOS/SOS, RCA Engineer, 8-1972, pp. 68-72.

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