Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly
Patent
1991-02-21
1993-03-09
Ramsey, Kenneth J.
Electric lamp or space discharge component or device manufacturi
Process
With assembly or disassembly
156647, 156656, 156657, H01J 102, H01J 902
Patent
active
051922401
ABSTRACT:
According to an embodiment of the present invention, a planar microelectronic vacuum triode comprises a cathode with three tips for electron emission that have been sharpened to points better than 1000 .ANG. by a microfabrication process of over-etching (excess etching) the cathod electrode layer. The cathode tips and, alternatively, an anode electrode too are elevated above the surface of a substrate such that a straight-line path exists for electrons to flow from the cathode tips to the anode. A self-aligned fabrication process is used to advantage to have the edge of a gate electrode that is nearest to the cathode and its tips complement the adjacent edge of the cathode electrode. The combination results in very low threshold voltages needed to initiate the electron flow and a high yield of anode current compared to cathode current. The addition of a shield electrode to the triode produces a tetrode device that exhibits a very high anode resistance.
REFERENCES:
patent: 3970887 (1976-07-01), Smith et al.
patent: 4168213 (1979-09-01), Hoeberechts
patent: 4578614 (1986-03-01), Gray et al.
patent: 4685996 (1987-08-01), Busta et al.
patent: 4827177 (1989-05-01), Lee et al.
patent: 4855636 (1989-08-01), Busta et al.
patent: 4904895 (1990-02-01), Tsukamoto et al.
patent: 5007873 (1991-04-01), Goronkin et al.
patent: 5021364 (1991-06-01), Akamine et al.
patent: 5030921 (1991-07-01), Kane
patent: 5066883 (1991-11-01), Yoshioka et al.
Applied Physics, "Vacuum Microelectronics", J. Itoh. vol. 39, No. 2, 1190, pp. 164-169.
Journal of Applied Physics, "Physical properties of thin-film field emission cathodes with molybdenum cones", C. A. Spindt, et al. vol. 47, No. 12, Dec. 1976 pp. 5248-5263.
Electronic Engineering Collective Research Institute Report, "Fabrication of Micron-size Vacuum Triodes with Si Field Emitters", J. Itoh vol. 53, No. 10, Jun. 5, 1989 pp. 1171-1182.
Ramsey Kenneth J.
Seiko Epson Corporation
Werner Raymond J.
LandOfFree
Method of manufacturing a microelectronic vacuum device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a microelectronic vacuum device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a microelectronic vacuum device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-207377