NPN/PNP Fabrication process with improved alignment

Details NPN/PNP Fabrication process with improved alignment NPN/PNP Fabrication process with improved alignment

1977-08-31

1979-12-25

Wojciechowicz, Edward J.

357 35, 357 48, 357 92, H01L 2702

Patent

active

041808274

ABSTRACT:
A double diffused, lateral PNP structure is disclosed which may be formed simultaneously with a vertical NPN structure. The novel feature of the structure is believed to be the vertical projection of the N-type base region for the PNP, down through the surrounding diffused P-type collector and into an N-type epitaxial layer between the collector diffusion and a buried sub-base, an N-type sub-base to electrically contact the base. The N-type epitaxial layer serves as the extrinsic base region permitting contact with the surface. The double diffused base and emitter structure permits a precise intrinsic base width to be formed for the lateral PNP. Thus, a high performance PNP can be constructed with compatible high performance NPNs on the same substrate.

REFERENCES:
patent: 4054900 (1977-10-01), Tokumaru et al.
patent: 4058419 (1977-11-01), Tokumaru et al.

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