Magnetoresistive effect element having magnetoresistive layer an

Details Magnetoresistive effect element having magnetoresistive layer an Magnetoresistive effect element having magnetoresistive layer an

1997-01-24

2000-11-14

Klimowicz, William

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

G11B 539

Patent

active

061478431

ABSTRACT:
In a magnetoresistive element, an underlying metal layer is formed on a substrate, and a magnetoresistive layer is formed on the underlying metal layer. The underlying metal layer has a thickness of about 0.1 to 3.0 nm.

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David A. Thompson et al., "Thin Film Magnetoresistors in Memory, Storage and Related Applications", IEEE Trans. on Magnetics, vol. MAG-11, No. 4, pp. 1039-1050, Jul. 1975.

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