Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1999-11-16
2000-11-14
Cunningham, Terry D.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327540, 323313, G05F 110
Patent
active
061475483
ABSTRACT:
A sub-bandgap reference circuit yielding a reference voltage smaller than the bandgap voltage of silicon. The circuit generates a negative temperature coefficient signal V.sub.be and an oppositely tracking (positive temperature coefficient) .DELTA.V.sub.be, and takes the average of two signals related to .DELTA.V.sub.be -V.sub.be to yield a temperature-compensated voltage of one-half the bandgap voltage of silicon. The circuit features an unequal area current mirror feeding the diodes and resistors used to generate the .DELTA.V.sub.be -V.sub.be signals using low supply voltages (less than 1.5 volts). A standard CMOS implementation provides low power consumption at a supply voltage of only 1 volt with a good temperature coefficient. The averaging circuit may be implemented by a continuous time divider or by using switched capacitor techniques. The loop amplifier used in the .DELTA.V.sub.be -V.sub.be circuitry operates with low headroom in part due to a n-well biasing scheme that lowers the effective threshold voltage of the p-channel FETs used in the loop amplifier.
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A Low Noise, High Resolution Silicon Temperature Sensor, Kenneth S. Szajda, Charles G. Sodini, and H. Frederick Bowman, IEEE Journal of Solid-State Circuits, vol. 31, No. 9, Sep. 1996.
Cunningham Terry D.
Intel Corporation
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