Semiconductor device of non-single crystal structure

Details Semiconductor device of non-single crystal structure Semiconductor device of non-single crystal structure

1981-06-29

1986-04-08

Edlow, Martin H.

357 16, 357 20, 357 30, 357 58, 357 91, 357 59, H01L 2904

Patent

active

045816204

ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.

REFERENCES:
patent: 3716844 (1973-02-01), Brodsky
patent: 3771026 (1973-11-01), Asai et al.
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4113531 (1978-09-01), Zanio et al.
patent: 4224084 (1980-09-01), Pankove
patent: 4239554 (1980-12-01), Yamazaki
patent: 4240843 (1980-12-01), Cellar et al.
patent: 4267011 (1981-05-01), Shibata et al.
patent: 4270018 (1981-05-01), Gibbons
patent: 4272880 (1981-06-01), Pashley
patent: 4339285 (1982-07-01), Pankove

Affiliated with

Also associated with

Rating

Semiconductor device of non-single crystal structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device of non-single crystal structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device of non-single crystal structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068687