Semiconductor device manufacturing: process – Chemical etching
Patent
1998-07-10
2000-06-13
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
438704, 438706, H01L 21302
Patent
active
060749474
ABSTRACT:
A process for improving the uniformity of the thickness of a semiconductor substrate utilizing plasma assisted chemical etching is disclosed. The process includes measuring the thickness of a semiconductor substrate at discrete points on the front surface, computing a dwell time versus position map based on the measured thickness data, mathematically inverting the position map to allow material to be removed from the back surface, and selectively removing material from the back surface of the substrate by plasma assisted chemical etching to improve the thickness uniformity of the substrate.
REFERENCES:
patent: 5238532 (1993-08-01), Zarowin et al.
patent: 5254830 (1993-10-01), Zarowin et al.
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5291415 (1994-03-01), Zarowin et al.
patent: 5336355 (1994-08-01), Zarowin et al.
patent: 5376224 (1994-12-01), Zarowin
patent: 5419803 (1995-05-01), Mumola
patent: 5688415 (1997-11-01), Bollinger et al.
patent: 5923425 (1999-07-01), Dewa et al.
Chen Kin-Chan
Plasma Sil, LLC
Utech Benjamin L.
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