Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1998-09-25
1999-10-19
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438 59, 438 73, H01L 2176, H01L 27146
Patent
active
059703164
ABSTRACT:
Isolation between the heavily-doped active regions of an active pixel sensor cell is provided by utilizing a series of isolation regions which have a doping concentration that is approximately equal to the doping concentration of a low-density drain (LDD) region. A first isolation region of the series, which has the same conductivity type as the active regions, is formed to adjoin a first active region. A second isolation region of the series, which has the opposite conductivity type as the active regions, is formed to adjoin the first isolation region. A third isolation region, which has the same conductivity type as the active regions, is formed to adjoin the second isolation region and a second active region.
REFERENCES:
patent: 3551761 (1970-12-01), Ruoff
patent: 3649887 (1972-03-01), Keller et al.
patent: 4450466 (1984-05-01), Nishizawa et al.
patent: 4454526 (1984-06-01), Nishizawa et al.
patent: 4733286 (1988-03-01), Matsumoto
patent: 4791070 (1988-12-01), Hirao et al.
patent: 4889826 (1989-12-01), Ohta
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5191398 (1993-03-01), Mutoh
patent: 5210433 (1993-05-01), Ohsawa et al.
patent: 5289023 (1994-02-01), Mead
patent: 5293051 (1994-03-01), Mariyama et al.
patent: 5369291 (1994-11-01), Swanson
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5424223 (1995-06-01), Hynecek
patent: 5432551 (1995-07-01), Matsunaga
patent: 5466612 (1995-11-01), Fuse et al.
patent: 5481124 (1996-01-01), Kozuka et al.
patent: 5488239 (1996-01-01), Jung
patent: 5506429 (1996-04-01), Tanaka et al.
patent: 5552619 (1996-09-01), Bergemont et al.
patent: 5565373 (1996-10-01), Nakashiba
patent: 5566044 (1996-10-01), Bergemont et al.
patent: 5576562 (1996-11-01), Konuma
patent: 5614744 (1997-03-01), Merrill
patent: 5637893 (1997-06-01), Furumiya
patent: 5667201 (1997-09-01), Kozuka et al.
patent: 5705846 (1998-01-01), Merrill
patent: 5779918 (1998-07-01), Inoue et al.
Fossum, E., "Active-pixel Sensors Challenge CCDs," Technology Guide: Detector Handbook, Laser Focus World, pp. 83-87, Jun. 1993.
Mendis, S. et al., "Progress in CMOS Active Pixel Image Sensors," SPIE, vol. 2172, pp. 19-29, paper presented at a Conference on Feb. 7-8, 1994 in San Jose, CA.
Kawashima, H. et al., "A 1/4 Inch Format 250K Pixel Amplified MOS Image S. ensor Using CMOS Process," IEDM (1993) pp. 575-578.
Dickinson, A. et al., "TP 13.5: A 256x256 CMOS Active Pixel Image Sensor with Motion Detection," IEEE (1995) International Solid-State Circuits Conf., Feb. 16, 1995.
Foveon, Inc.
Mulpuri Savitri
LandOfFree
Method of making active pixel sensor cell that minimizes leakage does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making active pixel sensor cell that minimizes leakage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making active pixel sensor cell that minimizes leakage will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2068210