Semiconductor switch having a disconnectible thyristor

Details Semiconductor switch having a disconnectible thyristor Semiconductor switch having a disconnectible thyristor

1983-05-18

1986-04-08

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252C, 307252M, 307305, 357 234, 357 38, H03K 1772

Patent

active

045815437

ABSTRACT:
A semiconductor switch has a disconnectible thyristor, a first switching transistor connected to a lead of the thyristor and a turn-off current path which emits a control electrode of the thyristor to a terminal of the lead. Given such semiconductor switches, the critical voltage rise rate dU/dt is increased for an inhibit voltage up to which an undesired ignition of the thyristor is reliably avoided. This is achieved by providing a second switching transistor having its switching path connected in the turn-off current path. Both switching transistors are conductive in the inhibiting condition of the thyristor and form a stabilizing emitter-base short.

REFERENCES:
patent: 3614474 (1971-10-01), Hahn
patent: 4224634 (1980-09-01), Svedberg
patent: 4284911 (1981-08-01), McKeon
F. J. Burgum, "Basic GTO Drive Circuits", Philips Technical Publication 029, Electronic Components and Applications, vol. 3, No. 4, Aug. 1981, pp. 232-237.

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