Driver circuits for emitter switch gate turn-off SCR devices

Details Driver circuits for emitter switch gate turn-off SCR devices Driver circuits for emitter switch gate turn-off SCR devices

1983-11-14

1986-04-08

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307305, H03K 1772

Patent

active

045815429

ABSTRACT:
A bipolar emitter switching transistor in an emitter switched gate turn-off thyristor (GTO) arrangement has a controllable switching device coupled between the base of the emitter switching transistor and the anode of the GTO so that base current needed for the bipolar emitter switching transistor, to obtain a low collector-emitter voltage drop during transistor conduction, is derived from the load circuit, resulting in a greatly reduced base drive power supply requirement.

REFERENCES:
patent: 3466467 (1969-09-01), Houcke et al.
patent: 3614474 (1971-10-01), Hahn
patent: 3619652 (1971-11-01), Ogle
patent: 4160920 (1979-07-01), Courier de Mere
Wirth, IEEE Industrial Application Society Conference Record, pp. 788-793, "The Gate Turn-Off Thyristor in the Cascode Configuration".
Chen et al., IEEE Power Electronics Specialyts Conference 1981, pp. 252-257, "Application of Transistor Emitter-Open Turn-Off Scheme to High Voltage Power Inverters".

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