Method for fabricating a small area of contact between electrode

Details Method for fabricating a small area of contact between electrode Method for fabricating a small area of contact between electrode

1996-10-02

2000-11-14

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 4, 257 41, 257 50, 257775, H01L 2900

Patent

active

061473952

ABSTRACT:
An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure, improved current densities through the chalcogenide material can be achieved.

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patent: 5851882 (1998-12-01), Harshfield

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