PbS.sub.x Se.sub.1-x semiconductor

Details PbS.sub.x Se.sub.1-x semiconductor PbS.sub.x Se.sub.1-x semiconductor

1979-03-26

1982-07-13

Edlow, Martin H.

357 61, H01L 2714

Patent

active

043397646

ABSTRACT:
A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb].sub.a [S.sub.x Se.sub.1-x ].sub.1-a wherein x varies between one and zero, inclusive, and a=0.500.+-.0.003, deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical and optical properties.

REFERENCES:
patent: 4080723 (1978-03-01), Holloway
patent: 4086555 (1978-04-01), Krikorian
patent: 4231053 (1980-10-01), Schoolar
Hohnke et al., Appl. Phys. Lett., vol. 29, No. 2, Jul. 15, 1976, pp. 98-1 0.
Lovecchio et al., Infared Physics, (1975) vol. 15, No. 4, pp. 295-301.
Holloway et al., Appl. Phys. Lett., vol. 30, No. 4, Feb. 15, 1977, pp. 210-212.
Melngailis et al., Appl. Phy. Lett., vol. 9, No. 8, Oct. 15, 1966.

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