Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-07-30
1999-10-19
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular biasing
36518526, 36518528, 257336, H01L 2910, G11C 700
Patent
active
059699892
ABSTRACT:
Each of memory cells has one MOS transistor including a drain region, a source region, a channel region and a gate electrode. An impurity-introducing area of the channel region is varied in the width direction of the channel region to store data of plural bits in the memory cell.
REFERENCES:
patent: 4060738 (1977-11-01), Tasch, Jr. et al.
patent: 4449203 (1984-05-01), Adlhoch
patent: 4472791 (1984-09-01), Haken
patent: 4495602 (1985-01-01), Sheppard
patent: 4503518 (1985-03-01), Iwahashi
patent: 4604732 (1986-08-01), van Tran
patent: 5012448 (1991-04-01), Matsuoka et al.
patent: 5101380 (1992-03-01), Yasuda et al.
patent: 5218221 (1993-06-01), Okumura
patent: 5311463 (1994-05-01), Taji
patent: 5357465 (1994-10-01), Challa
patent: 5407844 (1995-04-01), Smayling et al.
patent: 5411908 (1995-05-01), Santin et al.
patent: 5504708 (1996-04-01), Santin et al.
patent: 5506805 (1996-04-01), Hirose et al.
patent: 5768192 (1998-06-01), Eitan
"Mid-Level Current Generator Circuit", IBM Technical Disclosure Bulletin, vol. 33, No. 1B, Jun. 1990, pp. 386-388.
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
LandOfFree
Semiconductor memory device capable of storing plural-bit data i does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device capable of storing plural-bit data i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device capable of storing plural-bit data i will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2064681