Gateless protection thyristor with a thick, heavily doped centra

Details Gateless protection thyristor with a thick, heavily doped centra Gateless protection thyristor with a thick, heavily doped centra

1986-03-12

1987-09-22

Clawson, Jr., Joseph E.

357 13, 357 39, 357 89, H01L 2974

Patent

active

046958630

ABSTRACT:
The invention relates to gateless thyristors and triacs used for protecting against over voltages. In order to obtain a high holding current without adversely affecting the current resistance capacities of the thyristor or the triac, a special impurity concentration profile is provided, in which the P type layer under the cathode layer has a very small thickness (less than 10 microns).

REFERENCES:
patent: 3099591 (1963-07-01), Shockley
patent: 3123750 (1964-03-01), Hutson et al.
patent: 3236698 (1966-02-01), Shockley
patent: 3312880 (1967-04-01), Longo et al.
patent: 3341749 (1967-09-01), Shields et al.
patent: 3389224 (1968-06-01), Schimmer
patent: 3442722 (1969-05-01), Bauerlein et al.
patent: 3515615 (1970-10-01), Howell et al.
patent: 3766450 (1973-10-01), Voss et al.
patent: 3774085 (1973-11-01), Platzoeder et al.

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