Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

1985-09-20

1987-09-22

Edlow, Martin H.

357 22, 357 34, H01L 2972, H01L 2980

Patent

active

046958622

ABSTRACT:
A semiconductor apparatus which includes a semiconductor substrate with semi-insulating properties and with a first region of a first conductivity type which will become the emitter region and a second region of the same first conductivity type which will become a collector region with the first and second regions formed in the semi-insulating semiconductor substrate and spaced apart from each other and a third region of a second conductivity type formed in the semi-insulating conductor substrate between the first and second regions and with forward biasing voltage applied between the third and first regions so as to form an imaginary base region in the semi-insulating semiconductor substrate beneath the third region due to implanted majority carriers from the third region so that the semiconductor apparatus operates as a bipolar transistor and wherein at least the first and/or the third regions consist of a plurality of regions.

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