Method for annealing single crystal fluoride and method for manu

Details Method for annealing single crystal fluoride and method for manu Method for annealing single crystal fluoride and method for manu

1998-08-17

2000-11-14

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 3, 117 73, 117 76, 117940, C30B 2912, C30B 3302

Patent

active

061464562

ABSTRACT:
An annealing method for a single crystal of fluoride is provided. The method includes the steps of removing at least one of attached objects and absorbed objects from the surface of the single crystal of fluoride to clean the surface, thereafter annealing the single crystal of fluoride, including heating the single crystal of fluoride and gradually cooling the heated single crystal of fluoride, and removing a deteriorated layer which is formed on the surface of the single crystal of fluoride during the annealing step.

REFERENCES:
patent: 3649552 (1972-03-01), Robinson et al.
patent: 5290730 (1994-03-01), McFarlane et al.
patent: 5394420 (1995-02-01), Senn et al.

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