Mask for forming features on a semiconductor substrate and a met

Details Mask for forming features on a semiconductor substrate and a met Mask for forming features on a semiconductor substrate and a met

1997-08-19

1999-02-16

Nuzzolillo, Maria

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

216 12, 216 49, 216 51, 438714, 438735, 427199, 427201, 427282, G03F 900, B05D 500, B05D 136, B05D 132

Patent

active

058718702

ABSTRACT:
A mask and a method for forming a mask on a surface of an underlying layer of material used in semiconductor device manufacturing. The mask is a mixture of mask particles and spacer particles. The spacer particles space the mask particles apart from one another to control the distance and the uniformity of the distribution of mask particles across the surface of the underlying layer. The spacer particles and mask particles have different physical properties that allow the spacer particles to be selectively removed from the surface of the underlying layer. The spacer particles are preferably removed from the surface of the underlying layer by selectively etching the spacer particles from the underlying layer. After the spacer particles are removed from the underlying layer, the mask particles remain on the underlying layer to provide spaced apart mask elements on the surface of the underlying layer.

REFERENCES:
patent: 4407695 (1983-10-01), Deckman et al.
patent: 5510156 (1996-04-01), Zhao
patent: 5695658 (1997-12-01), Alwan

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