Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-06-05
1998-04-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 78, 257289, 257295, 257331, 257341, 257410, H01L 29161, H01L 2912, H01L 2951, H01L 2978
Patent
active
057420769
ABSTRACT:
A silicon carbide switching device having near ideal electrical characteristics includes an electrical insulator with an electrical permittivity greater than about ten times the permittivity of free space (.epsilon..sub.o) and more preferably greater than about fifteen times the permittivity of free space, as a gate electrode insulating region. The use of electrical insulators having high electrical permittivities relative to conventional electrical insulators such as silicon dioxide significantly improves the breakdown voltage and on-state resistance characteristics of a silicon carbide switching device to the point of near ideal characteristics, as predicted by theoretical analysis. Thus, the preferred advantages of using silicon carbide, instead of silicon, can be more fully realized. Electrical insulators having low critical electric field strengths relative to conventional electrical insulators such as silicon dioxide can also be used even though these insulators are relatively more susceptible to field induced dielectric breakdown for a given electric field strength. Such electrical insulators include titanium dioxide.
REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 3412297 (1968-11-01), Amlinger
patent: 4288801 (1981-09-01), Ronen
patent: 4893160 (1990-01-01), Blanchard
patent: 4914058 (1990-04-01), Blanchard
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5215599 (1993-06-01), Hingorani et al.
patent: 5298781 (1994-03-01), Cogan et al.
patent: 5307305 (1994-04-01), Takasu
patent: 5323040 (1994-06-01), Baliga
patent: 5323044 (1994-06-01), Rumennik et al.
patent: 5430315 (1995-07-01), Rumennik
patent: 5473176 (1995-12-01), Kakumoto
patent: 5558313 (1996-09-01), Hshieh et al.
Kurogi et al JJ AP vol. 44 1975 pp. 197-202 Ferroelectric . . . Fr/m.
B. Jayant Baliga, Power MOSFET, Chapter 7, Power Semiconductor Devices, 1996, pp. 335-425.
M. Bhatnagar, et al., SiC Power UMOSFET: Design, Analysis and Technological Feasibility, Inst. Phys. Conf. Ser. No. 137: Chapter 7, 1994, pp. 703-706.
B. Jayant Baliga, New Materials Beyond Silicon For Power Devices, Power Semiconductor Devices and Circuits, 1992, pp. 377-389.
Bhatnagar, et al., Comparison of 6H-SiC, 3C-SiC, and Si For Power Devices, IEEE Transactions On Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.
M. Bhatnagar, et al., Comparison Of Ti and Pt Silicon Carbide Schottky Rectifiers, IEDM 92, pp. 789-792.
M. Bhatnagar, et al., Silicon-Carbide High-Voltage (400 V) Schottky Barrier Diodes, IEEE Electron Device Letters, vol. 13, No. 10, Oct. 1992, pp. 501-503.
Alok, et al., Low Contact Resistivity Ohmic Contacts to 6H-Silicon Carbide, IEDM 93, pp. 691-694.
Alok, et al., Electrical Properties of Thermal Oxide Grown on n-type 6H-Silicon Carbide, Appl. Phys. Lett., vol. 64, No. 21, May 23, 1994, pp. 2845-2846.
Alok, et al., Electrical Properties of Thermal Oxide Grown Using Dry Oxidation on p-type 6H-Silicon Carbide, Appl. Phys. Lett., vol. 65, No. 17, Oct. 24, 1994, pp. 2177-2178.
Alok, et al., A Simple Edge Termination for Silicon Carbide Devicces with Nearly Ideal Breakdown Voltage, IEEE Electron Device Letters, vol. 15, No. 10, Oct. 1994, pp. 394-395.
Alok, et al., A Novel Method For Etching Trenches In Silicon Carbide, Journal of Electronic Materials, vol. 24, No. 4, 1995, pp. 311-314.
A. Moki, et al., Low Resistivity As-Deposited Ohmic Contacts to 3C-SiC, Journal of Electronic Materials, vol. 24, No. 4, 1995, pp. 315-318.
Shenoy, et al., Planar, Ion Implanted, High Voltage 6H-SiC P-N Junction Diodes, IEEE Electron Device Letters, vol. 16, No. 10, Oct. 1995, pp. 454-456.
Alok, et al. Thermal Oxidation of 6H-Silicon Carbide at Enhanced Growth Rates, IEEE Electron Device Letters, vol. 15, No. 10, Oct. 1994, pp. 424-426.
Palmour, et al., Vertical Power Devices In Silicon Carbide, Inst. Phys. Conf. Ser. No. 137, Chapter 6, 1994 IOP Publishing Ltd., pp. 499-503.
Fuyuki, et al., Effects of Small Amount of Water on Physical and Electrical Properties of TiO.sub.2 Films Deposited by CVD Method, The Journal of the Electrical Chemical Society, vol. 135, No. 1, 1988, pp. 248-250.
Stecki, et al., Residue-Free Reactive Ion Etching of .beta.-SiC in CHF.sub.3 /O.sub.2 with H.sub.2 Additive, Appl. Phys. Lett., vol. 60, No. 16, Apr. 20, 1992, pp. 1966-1968.
Masao Taguchi, Comparison of DRAM Capacitor Dielectric by Stored Charge and Holding Time Using TQV Chart, IEEE Electron Device Letters, vol. 13, No. 13, Dec. 1992, pp. 642-644.
Fuyuki et al., Electronic Properties of the Interface Between Si and TiO.sub.2 Deposited at Very Low Temperatures, Japanese Journal of Applied Physics, vol. 25, No. 9, Sep., 1986, pp. 1288-1291.
G.P. Burns, Titanium Dioxide Dielectric Films Formed By Rapid Thermal Oxidation, J. Appl. Phys., vol. 65, No. 5, Mar. 1, 1989, pp. 2095-2097.
Tye, et al., Electrical Characterisitics of Epitaxial CeO.sub.2 on Si(111), Appl. Phys. Lett., vol. 65, No. 24, Dec. 12, 1994, pp. 3081-3083.
Katsuta, et al., Electrical Properties of Rutile (TiO.sub.2) Thin Film, Japanese Journal of Applied Physics, vol. 10, No. 8, Aug. 1971, pp. 976-986.
Krupanidhi, et al, Pulsed Laser Deposition of Strontium Titanate Thin Films For Dynamic Random Access Memory Applications, Thin Solid Films, vol. 249, 1994, pp. 100-108.
Constapel, et al., Trench-IGBTs With Integrated Diverter Structures, Proceedings of the 7th International Symposium on Power Semiconductor Devices & ICs, ISPSD '95, May 23-25, 1995, pp. 201-206.
Palmour, et al., High Temperature 4H-Silicon Carbide Thyristors and Power MOSFETS, Space Technology and Applications International Forum, Part Three, AIP Conference Proceedings 361, 1996 American Institute of Physics, pp. 1321-1326.
Allen, et al., Silicon Carbide MESFET's With 2 W/mm and 50% P.A.E. At 1.8 GHz, Proceedings of the 1996 MTT Conference.
Baliga Bantval Jayant
McLarty Peter Kerr
Sridevan Srikant
Jackson Jerome
North Carolina State University
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