Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-05-12
1999-10-19
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257 66, 257350, 257351, H01L 2904, H01L 31036, H01L 31112, H01L 2701
Patent
active
059693770
ABSTRACT:
A thin film transistor substrate integrated with a driver circuit is provided for use in a liquid crystal display. The thin film transistor substrate includes a substrate having a pixel region and a driver region, a plurality of pixel driving thin film transistors formed in the pixel region, and a CMOS thin film transistor circuit formed in the driver region. Each of the plurality of pixel driving thin film transistors includes a channel region formed of an amorphous semiconductor, source and drain regions in contact with the channel region and formed of a polycrystalline semiconductor, and first and second transparent electrodes in contact with the source and drain regions, respectively. The CMOS thin transistor circuit includes a P-type thin film transistor and an N-type thin film transistor. Each of the P-type and N-type thin film transistors includes a channel region formed of a polycrystalline semiconductor and source and drain regions in contact with the channel region and formed of a polycrystalline semiconductor. Each of the P-type and N-type thin film transistors further includes third and fourth transparent electrodes in contact with the source and drain regions of the corresponding type thin film transistor, respectively, and source and drain electrodes in contact with the third and fourth transparent electrodes, respectively.
REFERENCES:
patent: 5877514 (1999-03-01), Seo
LG Electronics Inc.
Loke Steven H.
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