Method of growing gallium nitride on a spinel substrate

Details Method of growing gallium nitride on a spinel substrate Method of growing gallium nitride on a spinel substrate

1996-12-27

1998-04-21

Dutton, Brian

Fishing, trapping, and vermin destroying

437129, H01L 2120, H01L 21203, H01L 21205

Patent

active

057417245

ABSTRACT:
A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.

REFERENCES:
patent: 4769341 (1988-09-01), Luryi
patent: 5448084 (1995-09-01), Hoke et al.
patent: 5530267 (1996-06-01), Brandle, Jr. et al.

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