Fishing – trapping – and vermin destroying
Patent
1994-03-16
1997-12-16
Kunemund, Robert
Fishing, trapping, and vermin destroying
437982, H01L 21316
Patent
active
056984731
ABSTRACT:
An improved process is provided for forming a highly planar BPSG interlevel dielectric. The process includes using a silane based source material placed within a plasma enhanced CVD chamber. The plasma enhanced CVD chamber undergoes high energy plasma deposition by applying an RF energy exceeding 950 watts in order to minimize formation of silicon-rich intermediates upon the semiconductor substrate. Moreover, densification of the BPSG material occurs within an oxygen ambient to enhance the formation of silicon dioxide having a flow angle substantially less than lower power, non-oxygen densified processes. Still further, BPSG can, if desired, be selectively etched to form a more planarized topography or a possibly recessed topography. Selective etching is brought about by a photolithography mask used to form the underlying conductors.
REFERENCES:
patent: 4154873 (1979-05-01), Hickox et al.
patent: 5244841 (1993-09-01), Marks et al.
patent: 5350486 (1994-09-01), Huang
patent: 5354695 (1994-10-01), Leedy
patent: 5389581 (1995-02-01), Freiberger et al.
patent: 5409743 (1995-04-01), Bouffard et al.
patent: 5438023 (1995-08-01), Argos, Jr. et al.
Ibok Effiong E.
Williams John D.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Kunemund Robert
Whipple Matthew
LandOfFree
Method for forming a silane based boron phosphorous silicate pla does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a silane based boron phosphorous silicate pla, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a silane based boron phosphorous silicate pla will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-205561