Suppression of hillock formation in thin aluminum films

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead

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257773, 257776, H01L 214763

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active

061407011

ABSTRACT:
A multilayer structure is provided which suppresses hillock formation due to post-heat treatment steps in thin aluminum films deposited on other substrates by sandwiching the aluminum film between thin layers of aluminum titanium nitride. The first aluminum titanium nitride layer acts as a compatibilizing layer to provide a better match between the coefficients of thermal expansion of the substrate and aluminum metal layer. The second aluminum titanium nitride layer acts as a cap layer to suppress hillock formation.

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Onishi et al., "Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter-deposited aluminum alloy thin films" J. Vac. Technol. A 14(5), Sep./Oct. 1996, pp. 2728-2735.

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