Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Patent
1999-08-31
2000-10-31
Picardat, Kevin M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
257773, 257776, H01L 214763
Patent
active
061407011
ABSTRACT:
A multilayer structure is provided which suppresses hillock formation due to post-heat treatment steps in thin aluminum films deposited on other substrates by sandwiching the aluminum film between thin layers of aluminum titanium nitride. The first aluminum titanium nitride layer acts as a compatibilizing layer to provide a better match between the coefficients of thermal expansion of the substrate and aluminum metal layer. The second aluminum titanium nitride layer acts as a cap layer to suppress hillock formation.
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McTeer Allen
Raina Kanwal K.
Zhang Tianhong
Collins Deven M.
Micro)n Technology, Inc.
Picardat Kevin M.
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