Controlled isotropic etch process and method of forming an openi

Details Controlled isotropic etch process and method of forming an openi Controlled isotropic etch process and method of forming an openi

1997-03-19

1999-10-19

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438700, 438704, 438974, H01L 21302

Patent

active

059688513

ABSTRACT:
The present invention relates to a method of manufacturing an opening through a dielectric layer. The method comprises treating a polished dielectric layer with a wet etch selectively enchancing composition, such as buffered HF, prior to the formation of a patterned photoresist to improve the lateral-to-vertical wet etch ratio.

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