Ion implantation apparatus, ion implantation method and semicond

Details Ion implantation apparatus, ion implantation method and semicond Ion implantation apparatus, ion implantation method and semicond

1995-11-06

2000-10-31

Berman, Jack

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423P, H01J 37317, H01L 21265

Patent

active

061406562

ABSTRACT:
An ion generator vessel can be filled up with raw material gas containing a specific gas component. The ion generator vessel can be irradiated with a laser beam from a laser oscillator. Due to the beam which is applied into the ion generator vessel, only the specific gas component is selectively excited by multi-photon absorption, to generate ions. Thus, a semiconductor substrate can be inhibited from damage in ion implantation, and processability such as the throughput etc. can be improved.

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patent: 3914655 (1975-10-01), Dreyfus et al.
patent: 4158139 (1979-06-01), Rostler
patent: 4442354 (1984-04-01), Hurst et al.
patent: 4670064 (1987-06-01), Schachameyer et al.
patent: 4692627 (1987-09-01), Ueda et al.

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