Process for manufacturing an interconnect bump for flip-chip int

Details Process for manufacturing an interconnect bump for flip-chip int Process for manufacturing an interconnect bump for flip-chip int

1995-06-07

1997-12-16

Graybill, David

Fishing, trapping, and vermin destroying

22818022, H01L 21283, H01L 2158, H01L 2160

Patent

active

056984650

ABSTRACT:
A process where in an interconnect bump is formed on a substrate structure of a flip-chip microelectronic integrated circuit by sputtering a metal base layer on the substrate, and then forming a copper standoff on the base layer. A solder cap is formed on the standoff having a peripheral portion that extends laterally external of the standoff. The peripheral portion of the cap is used as a self-aligned mask for a photolithographic step that results in removing the metal base layer except under the standoff and the cap. The cap has a lower melting point than the standoff. Heat is applied that is sufficient to cause the cap to melt over and coat the standoff and insufficient to cause the standoff to melt. The peripheral portions of the cap and the base layer that extend laterally external of the standoff cause the melted solder to form into a generally hourglass shape over the standoff due to surface tension.

REFERENCES:
patent: 5466635 (1995-11-01), Lynch et al.

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