Method of manufacturing a semiconductor device with oxynitride l

Details Method of manufacturing a semiconductor device with oxynitride l Method of manufacturing a semiconductor device with oxynitride l

1997-02-03

1997-12-16

Niebling, John

Fishing, trapping, and vermin destroying

437239, 437242, H01L 2126

Patent

active

056984642

ABSTRACT:
A P-type silicon substrate is heated at about 800.degree. C. in an O.sub.2 atmosphere containing HCl, thereby forming a silicon oxide film on the substrate. Then, X rays are applied from an X-ray source to the silicon oxide film, damaging the silicon oxide film and forming many defects therein. Next, the silicon oxide film is heated at about 1000.degree. C. for 60 seconds in an NH.sub.3 atmosphere, thereby introducing nitrogen into the silicon oxide film having many defects. As a result, the silicon oxide film changes into an oxynitride film. The oxynitride film is heated to about 1000.degree. C. for 60 seconds in an O.sub.2 atmosphere.

REFERENCES:
patent: 5198392 (1993-03-01), Fukuda et al.
patent: 5208189 (1993-05-01), Nguyen et al.
patent: 5254506 (1993-10-01), Hori

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