Magnetoresistance effect film and magnetoresistance effect type

Details Magnetoresistance effect film and magnetoresistance effect type Magnetoresistance effect film and magnetoresistance effect type

1997-12-18

1999-10-19

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428694R, 428694TR, 428694T, 428694TS, 428694TM, 428900, 360113, 324252, 2041922, G11B 566

Patent

active

059686766

ABSTRACT:
A spin valve type magnetoresistance effect film comprises a magnetic multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from a surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer. The antiferromagnetic layer contains oxygen as impurities and a concentration of oxygen contained in the antiferromagnetic layer is set to 1 to 2,000 atomic ppm. With this arrangement, there can be provided a magnetoresistance effect film having a high-quality antiferromagnetic layer which is excellent in thermal stability, sufficiently high in blocking temperature and highly excellent in pinning effect. Further, there can be provided a magnetoresistance effect type head which is excellent in thermal stability, high in magnetic field sensitivity and large in MR change ratio.

REFERENCES:
patent: 5549978 (1996-08-01), Iwasaki
V.S. Speriosu, et al., "Magnetic thin films in recording technology", IBM J. Res. Develop., Nov. 1990, vol. 34 No. 6, pp. 884-902.
Susumu Soeya, et al., "Distribution of blocking temperature in bilayered Ni.sub.81 Fe.sub.19 /NiO films", J. Appl. Phys. 76 (9), Nov. 1, 1994, pp. 5356-5360.

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