Semiconductor laser element, method of manufacturing semiconduct

Details Semiconductor laser element, method of manufacturing semiconduct Semiconductor laser element, method of manufacturing semiconduct

1996-04-15

1998-12-22

Palmer, Phan T. H.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, 438 33, 438 28, H01S 319, H01L 2120

Patent

active

058526242

ABSTRACT:
In the semiconductor laser element of the present invention, a striped active layer for injecting an electrical current, is formed on the main surface of the semiconductor substrate. A pair of notches for dividing the semiconductor substrate, are made in the main surface of the semiconductor substrate so as to be in parallel with each other interposing the striped active layer. Each of the pair of notches has the ratio between the depth d thereof and a double of the width w, that is 2w, (d/2w), of 1.0 or higher.

REFERENCES:
Imai et al., "Compound Semiconductor Device H", 1985, pp. 201-202, (no month available).

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