Semiconductor laser having multi-quantum barrier including compl

Details Semiconductor laser having multi-quantum barrier including compl Semiconductor laser having multi-quantum barrier including compl

1995-09-18

1998-04-07

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

057373507

ABSTRACT:
A multi-quantum barrier layer includes alternatingly laminated barrier layers of a III-V compound semiconductor material and well layers of a III-V compound semiconductor material including the same Group V element as in the barrier layers. During the formation of the multi-quantum barrier layer it is not necessary to switch the Group V element source gas at the interface between a barrier layer and a well layer so that this interface is abrupt, improving the electron reflection efficiency of the multi-quantum barrier layer.

REFERENCES:
patent: 4671830 (1987-06-01), Burnham
patent: 5073892 (1991-12-01), Uomi et al.
patent: 5091756 (1992-02-01), Iga et al.
patent: 5251224 (1993-10-01), Irkawa et al.
patent: 5299045 (1994-03-01), Sekiguchi
patent: 5345461 (1994-09-01), Ahn et al.
patent: 5359617 (1994-10-01), Kano et al.
Uenohara et al., "Analysis of Electron Wave Reflectivity and Leakage Current of Multi-Quantum Barrier: MQB", Electronics and Communications in Japan, Part 2, vol. 71, No. 5, 1988, (Nov.).

Affiliated with

Also associated with

Rating

Semiconductor laser having multi-quantum barrier including compl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser having multi-quantum barrier including compl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser having multi-quantum barrier including compl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-20535