Method of making a reverse blocking IGBT

Details Method of making a reverse blocking IGBT Method of making a reverse blocking IGBT

1995-07-31

1997-12-16

Dutton, Brian

Fishing, trapping, and vermin destroying

437 31, H01L 21265, H01L 4500

Patent

active

056984545

ABSTRACT:
A method of forming a power integrated circuit device (100) including a semiconductor layer of first conductivity type. The semiconductor layer includes a front-side surface (103), a backside surface (116), and a scribe region (117). The semiconductor layer further including a plurality of active cells on the front-side surface (103). The present method includes forming a backside layer (116) of second conductivity type overlying the backside surface, and forming a continuous diffusion region (117) of the second conductivity type through the semiconductor layer to connect the scribe region to the backside layer (116).

REFERENCES:
patent: 3574009 (1971-04-01), Chizinsky et al.
patent: 4042448 (1977-08-01), Chang
patent: 4066483 (1978-01-01), D'Altroy et al.
patent: 4351677 (1982-09-01), Mochizuki et al.
patent: 4450467 (1984-05-01), Nagano et al.
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4720469 (1988-01-01), Keser et al.
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4967255 (1990-10-01), Bauer et al.
patent: 4994885 (1991-02-01), Yoshizawa
patent: 5077224 (1991-12-01), Schwarzbauer et al.
patent: 5084401 (1992-01-01), Hagino
patent: 5105244 (1992-04-01), Bauer
patent: 5119153 (1992-06-01), Korman et al.
patent: 5155569 (1992-10-01), Terashima
patent: 5164802 (1992-11-01), Jones et al.
patent: 5202750 (1993-04-01), Gough
patent: 5248622 (1993-09-01), Matsuda et al.
patent: 5286655 (1994-02-01), Tsunoda
patent: 5298457 (1994-03-01), Einthoven et al.
patent: 5360746 (1994-11-01), Terashima
patent: 5372954 (1994-12-01), Terashima
patent: 5440164 (1995-08-01), Finney et al.
Temple, "MOS-Controlled Thyristors--A New Class of Power Devices," IEEE Trans. Elec. Dev., (1989) vol. ED-33, pp. 1609-1618.
Temple, "Power Device Evolution and the MOS-Controlled Thyristor," PCIM (Nov. 1987), pp. 23-29.
Wolf, S. and Tauber, R. N., "Silicon Processing for the VLSI ERA," vol. 1, p. 28, (1986), Latice Press.

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