Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-12-24
1997-12-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257637, 257650, H01L 2980
Patent
active
057034044
ABSTRACT:
A semiconductor device having an interlayer insulating film improved to decrease film shrinkage and film stress is provided. Metal interconnections are formed on a substrate. A silicon oxide film is provided on the substrate to cover the metal interconnections and to fill a space between the metal interconnections. The chemical formula of the silicon oxide film contains Si-F bond.
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Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
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