MOSFET switch circuit for preventing the switch being turned on

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307570, 307300, 307584, H03K 17687, H03K 1760

Patent

active

051608626

ABSTRACT:
In order to rapidly reduce the magnetic energy of an inductive load (2), the driving voltage must be high. When the load (2) is disconnected via a MOSFET (3), then a premature activation of the MOSFET (3) given reversal of the voltage at the inductive load (2) must be prevented. A series circuit of a Zener diode and of a controllable switch (3) is connected between the gate and the load (2). A current source (depletion MOSFET 5) whose current is lower than the current that would flow upon Zener breakdown is connected between the gate and the source of the power MOSFET (1). The MOSFET (3) becomes conductive upon Zener breakdown and the energy is quickly reduced by a high voltage, essentially by the Zener voltage.

REFERENCES:
patent: 4549095 (1985-10-01), Stefani et al.
patent: 4808839 (1989-02-01), Dunn et al.
patent: 4952827 (1990-08-01), Leipold et al.
patent: 5017816 (1991-05-01), Wilcox

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