Method and apparatus for reducing tilt angle variations in an io

Details Method and apparatus for reducing tilt angle variations in an io Method and apparatus for reducing tilt angle variations in an io

1991-12-09

1992-11-03

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

051608464

ABSTRACT:
An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel that are biased by a control circuit. Once deflected, the ion beam enters an electrostatic lens that redeflects the once deflected ion beam. When the beam exits the lens it moves along a trajectory that impacts a workpiece. By controlled deflection of the beam multiple parallel beam paths result, all of which input the workpiece at a uniform impact angle.

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