Fishing – trapping – and vermin destroying
Patent
1982-01-26
1987-09-22
Roy, Upendra
Fishing, trapping, and vermin destroying
148DIG84, 357 91, 437175, H01L 21265
Patent
active
046945636
ABSTRACT:
This invention is concerned with an improved Schottky-barrier gate field effect transistor, which comprises a semi-insulating semiconductor substrate, an active layer formed on the surface of the semiconductor substrate and a source electrode, Schottky-barrier gate electrode and drain electrode formed on the active layer, in which the active layer has a first part having such a thickness as to give a predetermined pinch-off voltage and being formed near the gate electrode and a second part having a substantially similar carrier concentration to that of the first part and a larger thickness than the first part and being formed between the Schottky-barrier gate electrode and source electrode, and the upper surfaces of the first part and second part of the active layer are in a same plane.
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Electronics Letters, 4th February 1982, vol. 18, No. 3, pp. 119-121.
Roy Upendra
Sumitomo Electric Industries Ltd.
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