Titanium-tungsten target material for sputtering and manufacturi

Details Titanium-tungsten target material for sputtering and manufacturi Titanium-tungsten target material for sputtering and manufacturi

1991-05-31

1992-11-03

Lechert, Jr., Stephen J.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

419 23, 419 29, 419 32, 419 33, 419 38, 419 49, 419 53, 419 54, 148513, G22F 900

Patent

active

051605341

ABSTRACT:
Ti-W target material for sputtering includes a structure composed of a W phase, a Ti phase, and a Ti-W alloy phase of which 20% or more consist of the area ratio of a micro structure covering the cross section of the Ti-W target material. The Wi-W target material further includes dispersed tungsten particles, the Ti-W alloy phases substantially surrounding the W grains, and the Ti phases dispersed adjacent to the Ti-W alloy phase or the W grains. The formation of the Ti-W alloy phases is capable of reducing a substantial amount of the Ti phase in the target material. It is thus possible to prevent the generation of particles attributable to a difference between sputtering speeds of Ti and Ti-W.

REFERENCES:
patent: 4331476 (1982-05-01), Helderman et al.
patent: 4838935 (1989-06-01), Dunlop et al.

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