Corrosion-resistant member, wafer-supporting member, and method

Stock material or miscellaneous articles – Composite – Of inorganic material

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428469, 428472, 428704, 428901, 269289R, 118726, 118728, 432253, 432262, 432264, 432265, 414535, 2481761, 24834601, 206710, 206832, C04B 4100

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active

061399833

ABSTRACT:
This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.

REFERENCES:
patent: 4698320 (1987-10-01), Kasori et al.
patent: 4711861 (1987-12-01), Sawamura et al.
patent: 4746637 (1988-05-01), Kasori et al.
patent: 5063183 (1991-11-01), Taniguchi et al.
patent: 5314850 (1994-05-01), Miyahara
patent: 5409869 (1995-04-01), Ueno et al.
Chemical Abstracts, vol. 128, No. 7; Feb. 16, 1998; Columbus, OH; abstract No. 78835; Toyoda et al.: "Aluminum Nitride Substrate for Semiconductor Manufacturing Devices and the Manufacture" XP002082671 *abstract* & JP 09 328382 A (Mitsubishi Materials Corp) & Patent Abstracts of Japan, vol. 98, No. 4; Mar. 31, 1998 & JP 09 328382 A (Mitsubishi Materials Corp) *abstract; claim 14*.

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