Nitrogenated evaporable getter devices with high fritting resist

Details Nitrogenated evaporable getter devices with high fritting resist Nitrogenated evaporable getter devices with high fritting resist

1998-12-23

2000-10-31

Anthony, Joseph D.

Compositions

Getters or gas or vapor generating materials for electric...

Reactive compositions

2521816, 2521817, H01J 718

Patent

active

061397687

ABSTRACT:
Nitrogenated evaporable getter devices are disclosed which are resistant to the fritting conditions of the production processes of kinescopes for times of about five hours. A process is also disclosed for the production of these devices. The nitrogenated evaporable getter material comprises: 1) BaAl.sub.4 powder, 2) nickel powder, and 3) iron nitride and/or germanium nitride particles that have been coated with a thin vitreous layer of boron oxide and silicon oxide, formed through a sol-gel process employing a starting solution wherein the atomic ratio between boron and silicon ranges from about 4:1 to 0.75:1.

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Patent Abstracts of Japan, vol. 015., No. 250 (E-1082), Jun. 26, 1991 & JP 03 078928 A, Apr. 4, 1991, abstract.
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