Method of forming a semiconductor device by DUV resist patternin

Details Method of forming a semiconductor device by DUV resist patternin Method of forming a semiconductor device by DUV resist patternin

1997-08-29

1998-12-22

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438593, 438725, 438761, 4274071, H01L 21285, H01L 21311, H01L 21336, H01L 218244

Patent

active

058519270

ABSTRACT:
A method for forming a semiconductor device, including providing a silicon substrate (10), forming a gate stack (11) on the substrate (10), coating a deep ultra-violet (DUV) photoresist (30) on the gate stack (11), exposing and developing the photoresist (30), and etching the gate stack (11). According to the present invention, the gate stack (11) has a dielectric nitride layer (26), particularly, a silicon nitride layer. An adhesive oxide layer (28) is provided between the nitride layer (26) and the photoresist (30) to prevent undesirable lifting of the photoresist (30). Yield is greatly increased and defectivity is reduced.

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